onsemi NTHL065N65S3F N-Kanal, THT MOSFET 650 V / 46 A 337 W, 3-Pin TO-247

Channel-Typ = N
Dauer-Drainstrom max. = 46 A
Drain-Source-Spannung max. = 650 V
Gehäusegröße = TO-247
Montage-Typ = THT
Pinanzahl = 3
Drain-Source-Widerstand max. = 65 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Gate-Schwellenspannung min. = 3V
Verlustleistung max. = 337 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = ±30 V
Gate-Ladung typ. @ Vgs = 98 nC @ 10 V
Höhe = 20.82mm

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Features: 700V@T_J=150 Ultra Low Gate Charge (Typ.Qg=98nC) Low Effective Output Capacitance (Typ.Coss (eff.)=876pF) Excellent body diode performance (lowQrr,robust body diode) Optimized Capacitance Typ. RDS(on)=54mΩ Benefits: Higher system reliability at low temperature operation Lower switching loss Higher system reliability in LLC and Phase shift fullbridge circuit Lower peak Vds and lower Vgs oscillation Applications: Telecommunication Cloud system Industrial End Products: Telecom power Server power EV charger Solar/UPS