|  |
| |
| Artikel-Nr.:
3794E-2296441 Herst.-Nr.:
NTBG015N065SC1 EAN/GTIN:
k.A. |
| |
|
| | |
| Channel-Typ = N
Dauer-Drainstrom max. = 145 A
Drain-Source-Spannung max. = 650 V
Gehäusegröße = D2PAK (TO-263)
Montage-Typ = SMD
Pinanzahl = 7
Drain-Source-Widerstand max. = 0,018 Ω
Gate-Schwellenspannung max. = 4.3V
Anzahl der Elemente pro Chip = 1
Serie = SiC Power
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Highest efficiency Faster operation frequency Increased power density Reduced EMI Reduced system size Weitere Informationen: | | Channel-Typ: | N | Dauer-Drainstrom max.: | 145 A | Drain-Source-Spannung max.: | 650 V | Gehäusegröße: | D2PAK (TO-263) | Montage-Typ: | SMD | Pinanzahl: | 7 | Drain-Source-Widerstand max.: | 0,018 Ω | Gate-Schwellenspannung max.: | 4.3V | Anzahl der Elemente pro Chip: | 1 | Serie: | SiC Power |
|
| | |
| | | |
| Weitere Suchbegriffe: mosfet d2pak, 2296441, Halbleiter, Diskrete Halbleiter, onsemi, NTBG015N065SC1, Semiconductors, Discrete Semiconductors, MOSFETs |
| | |
| |